NDT456P
제조 업체:
1개
기술:
MOSFET P-CH 30V 7.5A SOT-223-4
범주:
분리된 반도체 제품
상술
분류:
개별 반도체 제품 트랜지스터 FET, MOSFET 단일 FET, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
67 nC @ 10 V
Rds On (Max) @ Id, Vgs:
30mOhm @ 7.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1440 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223-4
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
7.5A (Ta)
Power Dissipation (Max):
3W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDT456
소개
P 채널 30 V 7.5A (Ta) 3W (Ta) 표면 마운트 SOT-223-4
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