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RS1E260ATTB1

제조 업체:
롬 반도체
기술:
MOSFET P-CH 30V 26A/80A 8HSOP
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
175 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3.1mOhm @ 26A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7850 pF @ 15 V
Mounting Type:
Surface Mount
시리즈:
-
Supplier Device Package:
8-HSOP
Mfr:
롬 반도체
Current - Continuous Drain (Id) @ 25°C:
26A (Ta), 80A (Tc)
전력 소모 (맥스):
3W (Ta)
Technology:
MOSFET (Metal Oxide)
기본 제품 번호:
RS1E
소개
P 채널 30 V 26A (Ta), 80A (Tc) 3W (Ta) 표면 장착 8-HSOP
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