DMN30H4D0LFDE-7
제조 업체:
다이오드 인코어레이트
기술:
MOSFET N-CH 300V 550MA 6UDFN
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET 특징:
-
Vgs(th) (Max) @ Id:
2.8V @ 250µA
작동 온도:
-55' Ｃ ~ 150' Ｃ (TJ)
Package / Case:
6-PowerUDFN
게이트는 브그스에 (큐그에게) (맥스)를 청구합니다:
7.6nC @ 10V
Rds On (Max) @ Id, Vgs:
4Ohm @ 300mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
187.3 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
U-DFN2020-6 (Type E)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
550mA (Ta)
Power Dissipation (Max):
630mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN30
소개
N 채널 300V 550mA (Ta) 630mW (Ta) 표면 장착 U-DFN2020-6 (형 E)
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| 이미지 | 부분 # | 기술 | |
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DMTH6016LPSQ-13 |
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ZXMN6A07FTA |
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ZXMP6A17GTA |
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DMP3010LK3-13 |
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