상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.9V @ 150µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
225 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.8mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
소스 전압 (프즈스)에 고갈되세요:
40 V
Vgs (Max):
±20V
제품 상태:
액티브
Input Capacitance (Ciss) (Max) @ Vds:
7330 pF @ 25 V
장착형:
표면 마운트
Series:
HEXFET®, StrongIRFET™
공급자의 장치 패키지:
TO-263AB
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
195A (Tc)
Power Dissipation (Max):
230W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFS7437
소개
N 채널 40 V 195A (Tc) 230W (Tc) 표면 장착 TO-263AB
가격 요구를 보내세요
주식:
MOQ: