NTR4101PT1G
제조 업체:
1개
기술:
MOSFET P-CH 20V 1.8A SOT23-3
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
8.5 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
85mOhm @ 1.6A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
675 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
공급자의 장치 패키지:
SOT-23-3 (TO-236)
Mfr:
onsemi
전류 - 연속 드레인(Id) @ 25°C:
1.8A (Ta)
Power Dissipation (Max):
420mW (Ta)
기술:
MOSFET (금속 산화물)
Base Product Number:
NTR4101
소개
P 채널 20V 1.8A (Ta) 420mW (Ta) 표면 장착 SOT-23-3 (TO-236)
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