W631GU6NB-12
제조 업체:
윈본드 전자공학
기술:
IC DRAM 1GBIT PARALLEL 96VFBGA
범주:
반도체
상술
Category:
Integrated Circuits (ICs)
Memory
Memory
Memory Size:
1Gbit
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tray
Series:
-
DigiKey Programmable:
Not Verified
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
15ns
Supplier Device Package:
96-VFBGA (7.5x13)
기억 영역형:
휘발성 물질
Mfr:
Winbond Electronics
클럭 주파수:
800 마하즈
Voltage - Supply:
1.283V ~ 1.45V, 1.425V ~ 1.575V
엑세스 시간:
20 나노 초
Package / Case:
96-VFBGA
메모리구성:
64M Ｘ 16
Operating Temperature:
0°C ~ 95°C (TC)
Technology:
SDRAM - DDR3L
Base Product Number:
W631GU6
Memory Format:
DRAM
소개
SDRAM - DDR3L 메모리 IC 1Gbit 평행 800 MHz 20 ns 96-VFBGA (7.5x13)
관련 제품
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W632GU6NB12I
IC DRAM 2GBIT PARALLEL 96VFBGA
W632GU6NB11I
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W971GG8NB25I
IC DRAM 1GBIT SSTL 18 60VFBGA
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W632GU6NB-11
IC DRAM 2GBIT PAR 96VFBGA
| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
W972GG6KB25I |
IC DRAM 2GBIT PARALLEL 84WBGA
|
|
|
|
W632GU6NB-09 |
IC DRAM 2GBIT PAR 96VFBGA
|
|
|
|
W25N04KVZEIR |
IC FLASH 4GBIT SPI/QUAD 8WSON
|
|
|
|
W632GU6NB-12 |
IC DRAM 2GBIT PARALLEL 96VFBGA
|
|
|
|
W25N02KVZEIR |
IC FLASH 2GBIT SPI/QUAD 8WSON
|
|
|
|
W632GU6NB12I |
IC DRAM 2GBIT PARALLEL 96VFBGA
|
|
|
|
W632GU6NB11I |
IC DRAM 2GBIT PAR 96VFBGA
|
|
|
|
W971GG8NB25I |
IC DRAM 1GBIT SSTL 18 60VFBGA
|
|
|
|
W632GG6NB-09 |
IC DRAM 2GBIT PAR 96VFBGA
|
|
|
|
W632GU6NB-11 |
IC DRAM 2GBIT PAR 96VFBGA
|
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