NTTFS5116PLTAG
제조 업체:
1개
기술:
MOSFET P-CH 60V 5.7A 8WDFN
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Rds On (Max) @ Id, Vgs:
52mOhm @ 6A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1258 pF @ 30 V
Mounting Type:
Surface Mount
Series:
-
공급자의 장치 패키지:
8-wdfn (3.3x3.3)
Mfr:
onsemi
전류 - 연속 드레인(Id) @ 25°C:
5.7A (Ta)
Power Dissipation (Max):
3.2W (Ta), 40W (Tc)
기술:
MOSFET (금속 산화물)
Base Product Number:
NTTFS5116
소개
P 채널 60 V 5.7A (Ta) 3.2W (Ta), 40W (Tc) 표면 장착 8-WDFN (3.3x3.3)
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