FDMS10C4D2N
제조 업체:
1개
기술:
MOSFET N-CH 100V 17A 8PQFN
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
65 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 44A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4500 pF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Power Dissipation (Max):
125W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS10
소개
N 채널 100 V 17A (Tc) 125W (Tc) 표면 장착 8-PQFN (5x6)
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주식:
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