SSM3J328R, LF
제조 업체:
토시바 반도체 및 저장장치
기술:
MOSFET P-CH 20V 6A SOT23F
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET 특징:
-
Vgs(th) (Max) @ Id:
1V @ 1mA
작동 온도:
150' Ｃ (TJ)
Package / Case:
SOT-23-3 Flat Leads
게이트는 브그스에 (큐그에게) (맥스)를 청구합니다:
12.8nC @ 4.5V
Rds On (Max) @ Id, Vgs:
29.8mOhm @ 3A, 4.5V
FET은 타이핑합니다:
P-채널
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
840 pF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
SOT-23F
Mfr:
Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3J328
소개
P 채널 20 V 6A (Ta) 1W (Ta) 표면 장착 SOT-23F
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TK8S06K3L ((T6L1,NQ) |
MOSFET N-CH 60V 8A DPAK
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SSM3J332R, LF |
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